Transistor bipolare BJT Toshiba 2SA1943-O

Characteristics
Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
Technology: Yes
Mounting Style: Through Hole
Package/involucro: TO-3P-3
Transistor polarity : PNP
Configuration: Single
Maximum DC collector current: 15A
Collector-emitter voltage VCEO Max: 230 V
VCBO base-collector voltage: 230 V
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 1.5 V
Pd - Power dissipation: 150W
Gain-bandwidth product fT: 30 MHz
Minimum working temperature
Maximum working temperature: + 150 C
Series: 2NT
Marchio: Toshiba
Collector DC current: 15 A
DC Collector/Base Gain hfe Min: 55
DC current gain hFE max: 160
Height: 26 mm
Length: 20.5 mm
Product Type: BJTs - Bipolar Transistors